The pi/2 side-reflection Laue technique and the new chart

For the capability of dynamic studies of structural changes of crystals under the environment of heat, electric or magnetic field, the pi/2 side-reflection Laue technique is performed in which the X-ray source, the specimen and the film are aligned along an L-shaped track. A new chart has also been designed for the analysis of pi/2 side-reflection Laue patterns. This new chart is applied to the analysis of crystal orientation in the pi/2 side-reflection Laue technique and to indexing the planes of simultaneous multiple-reflection images in Berg-Barrett topography. Also, the equation of zonal trace has been derived for depicting the zonal curves of configurations of pi/2 side-reflection spots and confirming the results which are analyzed by the new chart.