Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

被引:36
作者
Higashiwaki, M [1 ]
Matsui, T [1 ]
机构
[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan
关键词
molecular beam epitaxy; nitrides; semiconducting III-V materials; semiconducting indium compounds;
D O I
10.1016/j.jcrysgro.2004.05.045
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
InN films with electron densities of 1.6 x 10(18)-1.4 x 10(19) cm(-3) had photoluminescence (PL) properties with clear electron density dependencies. The PL peak shifted to a higher energy with increasing electron density, whereas PL intensity decreased with increasing electron density. These characteristics are typical of degenerate semiconductors with a large density of defects and/or dislocations. We estimated a band-gap energy of 0.6-0.65 eV for intrinsic InN from the shift in the PL peak position and band-gap shrinkage due to the conduction-band renormalization effect. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:162 / 166
页数:5
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