Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy

被引：40

作者：

Higashiwaki, M ^{[1
]}

Matsui, T ^{[1
]}

机构：

[1] Commun Res Labs, Koganei, Tokyo 1848795, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 1-3期

关键词：

atomic force microscopy; carrier density; Hall measurement; mobility; molecular beam epitaxy; indium nitride;

D O I：

10.1016/S0022-0248(03)00918-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Studying the epitaxial growth of InN films by plasma-assisted molecular-beam epitaxy, we found a buffer layer formed with a low-temperature-grown GaN (LT-GaN) and a low-temperature-grown InN (LT-InN) layers to be effective for improving their structural and electrical properties. Not only the growth temperature of a main part of InN film but growth temperatures and thicknesses of LT-GaN and LT-InN layers strongly influenced InN film properties. The surface of a 260-nm-thick InN film grown at the optimum condition was smooth with the surface root-mean-square roughness less than 4 nm. Its Hall mobility and background electron density at room temperature were 1420 cm(2)/V s and 1.4 x 10(18) cm(-3), respectively. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：128 / 135

页数：8

共 10 条

[1] Transient electron transport in wurtzite GaN, InN, and AlN [J].