q dependence of the growth-oscillation period of x-ray reflectivity in heteroepitaxy: Ho/W(110)

被引：34

作者：

Weschke, E ^{[1
]}

Schussler-Langeheine, C ^{[1
]}

Meier, R ^{[1
]}

Kaindl, G ^{[1
]}

Sutter, C ^{[1
]}

Abernathy, D ^{[1
]}

Grubel, G ^{[1
]}

机构：

[1] EUROPEAN SYNCHROTRON RADIAT FACIL, F-38043 GRENOBLE, FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.79.3954

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on pronounced oscillations of the specular x-ray reflectivity as a function of deposited material in epitaxial growth of Ho on W(110). In specular geometry, the periods of these growth oscillations are found to scale inversely with the length of the scattering vector q. This behavior is shown to be characteristic for heteroepitaxial growth, while in homoepitaxy the oscillation period is independent of q. The q dependence has to be accounted for in growth studies with x rays, in particular when growth-oscillation periods are related to the number of deposited layers.

引用

页码：3954 / 3957

页数：4

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