The dependence of channel length on channel width in narrow-channel CMOS devices for 0.35-0.13 μm technologies

被引：9

作者：

Hook, TB ^{[1
]}

Biesemans, S ^{[1
]}

Slinkman, J ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Essex Junction, VT 05452 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 02期

关键词：

semiconductor device mechanical factors; semiconductor devices; semiconductor process modeling; silicon;

D O I：

10.1109/55.821680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have found that narrow channel PFET's do not have the same effective channel length as wide PFET's with the same polysilicon length. Narrow PFET devices are longer than their wide counterparts by 20-40 nln while narrow NFET devices are negligibly different from wide NFET's. This phenomenon occurs in a wide variety of technologies, from 0.13 and 0.18 mu m technologies with extension/halo devices to a 0.35-mu m technology with simple abrupt-junction devices. Depending on the details of the short-channel rolloff behavior, this phenomenon may result in apparent anomalous narrow-channel threshold voltage behavior. We suggest that the modification of the boron redistribution by the mechanical stress imposed by the bounding isolation SiO2 may explain the effect.

引用

页码：85 / 87

页数：3

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