Extrinsic origin of ferromagnetism in ZnO and Zn0.9Co0.1O magnetic semiconductor films prepared by sol-gel technique

被引:96
作者
Belghazi, Y.
Schmerber, G.
Colis, S.
Rehspringer, J. L.
Dinia, A.
机构
[1] ULP, ECPM, CNRS, IPCMS,UMR 7504, F-67034 Strasbourg, France
[2] Fac Sci Rabat, Phys Mat Lab, Rabat, Morocco
关键词
D O I
10.1063/1.2355462
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the origin of ferromagnetism in ZnO and Co-doped ZnO magnetic semiconductor films prepared by sol-gel technique on Si(100) and SiO2 substrates. X-ray diffraction measurements have shown that ZnO and Co-doped ZnO have the expected wurtzite structure and a preferential orientation along the c axis. Optical transmittance measurements revealed that Co is incorporated into the lattice, as Co2+ substituting Zn2+ ions. Magnetization measurements have shown room-temperature ferromagnetism for both ZnO and ZnO:Co films. After annealing, the magnetization curves recorded on free substrates show the same ferromagnetic behavior as the ZnO:Co film indicating that the ferromagnetism is extrinsic and due to external pollution. (c) 2006 American Institute of Physics.
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页数:3
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