Randomized Benchmarking and Process Tomography for Gate Errors in a Solid-State Qubit

被引：195

作者：

Chow, J. M. ^{[1
,2
]}

Gambetta, J. M. ^{[3
,4
]}

Tornberg, L. ^{[5
]}

Koch, Jens ^{[1
,2
]}

Bishop, Lev S. ^{[1
,2
]}

Houck, A. A. ^{[1
,2
]}

Johnson, B. R. ^{[1
,2
]}

Frunzio, L. ^{[1
,2
]}

Girvin, S. M. ^{[1
,2
]}

Schoelkopf, R. J. ^{[1
,2
]}

机构：

[1] Yale Univ, Dept Phys, New Haven, CT 06520 USA

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[3] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada

[4] Univ Waterloo, Dept Phys & Astron, Waterloo, ON N2L 3G1, Canada

[5] Chalmers, SE-41296 Gothenburg, Sweden

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.102.090502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present measurements of single-qubit gate errors for a superconducting qubit. Results from quantum process tomography and randomized benchmarking are compared with gate errors obtained from a double pi pulse experiment. Randomized benchmarking reveals a minimum average gate error of 1.1 +/- 0.3% and a simple exponential dependence of fidelity on the number of gates. It shows that the limits on gate fidelity are primarily imposed by qubit decoherence, in agreement with theory.

引用

页数：4

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