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The structure of (root 3x root 3)R30 degrees-sulphur on Rh(111) surface studied by X-ray standing wavefield absorption and surface EXAFS

被引：6
作者：
Santoni, A
Cowie, BCC
Scarel, G
Dhanak, VR
机构：
[1] UNIV LIVERPOOL,IRC SURFACE SCI,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND
[2] ENEA,INN,DIV NUOVI MAT,I-00100 ROME,ITALY
[3] CLRC,DARESBURY LAB,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND
[4] UNIV TRIESTE,DIPARTMENTO FIS,I-34012 TRIESTE,ITALY
来源：
SURFACE SCIENCE | 1997年 / 388卷 / 1-3期
关键词：
chemisorption; low index single crystal surfaces; normal incidence standing X-ray wavefield; rhodium; sulphur; surface extended X-ray absorption fine structure; surface relaxation and reconstruction; surface structure; X-ray absorption;
D O I：
10.1016/S0039-6028(97)00420-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface structure of (root 3 x root 3)R30 degrees-S-Rh(111) has been investigated by normal incidence X-ray standing wavefield (NIXSW) absorption and surface-extended X-ray absorption fine structure (SEXAFS). NIXSW measurements show that the most likely site of adsorption is at the threefold ''fcc'' hollow, with some lateral disorder. The location of the S atoms at the ''fcc'' hollow site is consistent with S adsorption on the neighbouring fcc(111) transition metal surfaces. The coherent position relative to the Rh(111) lattice plane was measured to be 1.73 +/- 0.05 Angstrom. SEXAFS analysis revealed an S-Rh nearest neighbour bond distance of 2.25 +/- 0.04 Angstrom. The combined results of the NIXSW and SEXAFS measurements suggest that there is a net outward surface relaxation of the topmost Rh(111) layers of 0.1 +/- 0.05 Angstrom. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：254 / 261
页数：8
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