Ga2O3 and GaN semiconductor hollow spheres

被引：518

作者：

Sun, XM ^{[1
]}

Li, YD ^{[1
]}

机构：

[1] Tsing Hua Univ, Minist Educ, Key Lab Atom & Mol Nanosci, Dept Chem, Beijing 100084, Peoples R China

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2004年 / 43卷 / 29期

关键词：

gallium; microspheres; nanostructures; semiconductors; template synthesis;

D O I：

10.1002/anie.200353212

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Carbon spheres are used as templates to prepare semiconductor hollow spheres of Ga2O3 (depicted) and GaN. The thickness and uniformity of the final products are predetermined by the thickness of the active layer of the carbon spheres. The diameter of the spheres can be adjusted in the range of 100 nm to 1.5 μm, which covers the band gaps in the spectral regime from UV to near infrared.

引用

页码：3827 / 3831

页数：5

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