Carrier dynamics in quantum dot structures with different interdot spacings

被引：2

作者：

Marcinkevicius, S ^{[1
]}

Leon, R

机构：

[1] Royal Inst Technol, Dept Phys Opt, S-10044 Stockholm, Sweden

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

PHYSICA B | 1999年 / 272卷 / 1-4期

关键词：

quantum dots; carrier dynamics; photoluminescence;

D O I：

10.1016/S0921-4526(99)00247-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoexcited carrier dynamics have been examined by time-resolved photoluminescence in InGaAs/GaAs quantum dot structures with dot density ranging from 3.7 x 10(8) to 2.4 x 10(10) cm(-2). The time of carrier transfer into a dot decreases with increasing dot density as well as with photoexcited carrier density and temperature. It is suggested that potential barriers at the barrier, wetting layer and quantum dot interfaces hinder the carrier capture in low-density quantum dot structures. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：36 / 38

页数：3

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