Phonon-assisted capture and intradot Auger relaxation in quantum dots

被引：177

作者：

Ferreira, R ^{[1
]}

Bastard, G ^{[1
]}

机构：

[1] ENS, Phys Mat Condensee Lab, F-75005 Paris, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 19期

关键词：

D O I：

10.1063/1.124024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on calculations of capture and relaxation of carriers in quantum dots, specifically, InAs/GaAs self-assembled dots. We point out that the phonon-assisted carrier capture presents strong resonances versus the dot size and that the intradot Auger relaxation is extremely fast in these structures. This shows that energy relaxation in InAs/GaAs self-organized quantum dots is dominated by capture effects. (C) 1999 American Institute of Physics. [S0003-6951(99)03819-X].

引用

页码：2818 / 2820

页数：3

共 12 条

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