Hot carrier relaxation in InAs/GaAs quantum dots

被引：20

作者：

Heitz, R ^{[1
]}

Veit, M

Kalburge, A

Xie, Q

Grundmann, M

Chen, P

Ledentsov, NN

Hoffmann, A

Madhukar, A

Bimberg, D

Ustinov, VM

Kop'ev, PS

Alferov, ZI

机构：

[1] Univ So Calif, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1998年 / 2卷 / 1-4期

关键词：

quantum dots; carrier relaxation; time-resolved photoluminescence; excited states;

D O I：

10.1016/S1386-9477(98)00118-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Excited states and energy relaxation processes are studied for self-organized InAs/GaAs quantum dots (QDs). Photoluminescence excitation (PLE) spectra show sample-dependent either multi-LO-phonon resonances or excited state transitions; revealing the dominant carrier relaxation mechanism or the size-dependent excited state splitting of the QDs, respectively. Time-resolved photoluminescence results indicate sample-dependent non-radiative recombination, suggesting a model for the observed PLE behavior, analogous to hot carrier relaxation in higher-dimensional systems. Carrier relaxation in the self-organized InAs/GaAs QDs proceeds by multi-LO-phonon scattering on a 40 ps rime scale, which is short compared to radiative (> 500 ps) and non-radiative ( > 100 ps) recombination times, accounting for the absence of a phonon bottleneck effect in PL spectra. However, carrier relaxation might effect the stimulated emission region. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：578 / 582

页数：5

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