On Charge Carrier Recombination in Sb2S3 and Its Implication for the Performance of Solar Cells

被引：54

作者：

Darga, Arouna ^{[1
]}

Mencaraglia, Denis ^{[1
]}

Longeaud, Christophe ^{[1
]}

Savenije, Tom J. ^{[2
]}

O'Regan, Brian ^{[3
]}

Bourdais, Stephane ^{[4
]}

Muto, Takuma ^{[4
]}

Delatouche, Bruno ^{[4
]}

Dennler, Gilles ^{[4
]}

机构：

[1] Lab Genie Elect Paris, F-91192 Gif Sur Yvette, France

[2] Delft Univ Technol, Fac Sci Appl, Dept Chem Engn, NL-2628 BL Delft, Netherlands

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

[4] IMRA Europe SAS, F-06904 Sophia Antipolis, France

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 40期

关键词：

CHEMICALLY DEPOSITED SB2S3; PHASE-SHIFT ANALYSIS; MODULATED-PHOTOCURRENT; THIN; ABSORBER;

D O I：

10.1021/jp4072394

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Sb2S3 is widely considered to be an attractive photovoltaic material based on abundant, nontoxic elements. However, the maximum efficiency reported for solar cells based on this semiconductor does not exceed 6.5%. We have measured light intensity-dependent J-V curves, transient microwave photoconductivity, steady-state photocurrent grating, modulated photocurrent, and photoconductivity on Sb2S3-based samples. All techniques converge toward the same observation: the main recombination route controlling the density of charge carriers in the absorber is of an order greater than one and appears to stem from an exponentially decaying density of tail states within the conduction band of the material. This conclusion has direct and drastic implications for the performance of Sb2S3-based solar cells.

引用

页码：20525 / 20530

页数：6

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