Dependence of optical gain on crystal orientation in wurtzite-GaN strained quantum-well lasers

被引：41

作者：

Ohtoshi, T

Niwa, A

Kuroda, T

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji-shi, Tokyo 185

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.365951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical gains in wurtzite-GaN strained quantum-well (QW) lasers are estimated theoretically for various crystallographic directions. The calculation of the valence subbands is based on the k.p theory, where deformation potentials are determined by a semiempirical tight-binding method. It is found that the gains in GaN strained QW lasers with non-(0001) orientations, particularly around the (10 (1) over bar 5) orientation, are markedly high and anisotropic, unlike those in (0001)-oriented lasers. (C) 1997 American Institute of Physics.

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页码：1518 / 1520

页数：3

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