Surface lifetimes of Ga and growth behavior on GaN(0001) surfaces during molecular beam epitaxy

被引：54

作者：

Guha, S

Bojarczuk, NA

Kisker, DW

机构：

[1] IBM Research Division, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.117349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2+/-0.2 eV is measured for Ga adatoms. Porous columnar features in theGaN microstructure are observed that are enhanced by higher growth temperatures and eliminated by growing Mg or Si doped GaN. We propose a model for this observation. (C) 1996 American Institute of Physics.

引用

页码：2879 / 2881

页数：3

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