Kinetic modeling of film growth rates of TiN films in atomic layer deposition

被引：37

作者：

Lim, JW ^{[1
]}

Park, JS ^{[1
]}

Kang, SW ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A kinetic model has been studied for exploring the prospects of atomic layer deposition (ALD) of TiN thin films. In the present article, assuming the existence for readsorption of each reactant, we can explain and model the film growth of 0-2 at. ML in one deposition cycle in TiN-ALD. Applying the proposed model to TiN films grown by ALD using tetrakis(dimethylamido)titanium and ammonia, the parameters related to both the adsorption rate and the adsorption order of each reactant were extracted. With the extracted parameters, TiN film thickness in one deposition cycle depending on the pulse time of each reactant could be predicted in a reasonable range of accuracy. (C) 2000 American Institute of Physics. [S0021-8979(00)07609-X].

引用

页码：4632 / 4634

页数：3

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