Metal-organic atomic-layer deposition of titanium-silicon-nitride films

Titanium-silicon-nitride films were grown by metal-organic atomic-layer deposition at 180 degrees C. When silane was supplied separately in the sequence of a tetrakis(dimethylamido) titanium pulse, silane pulse, and ammonia pulse, the Si content in the deposited films and the deposition thickness per cycle remained almost constant at 18 at. % and 0.22 nm/cycle, even though the silane partial pressure varied from 0.27 to 13.3 Pa. Especially, the Si content dependence is strikingly different from the conventional chemical-vapor deposition. The capacitance-voltage measurement revealed that the Ti-Si-N film prevents the diffusion of Cu up to 800 degrees C for 60 min. Step coverage was approximately 100% even on the 0.3 mu m diam hole with slightly negative slope and 10:1 aspect ratio. (C) 1999 American Institute of Physics. [S0003-6951(99)01137-7].