Defect interactions in Sn1-xGex random alloys

被引：68

作者：

Chroneos, A. ^{[1
]}

Jiang, C. ^{[4
]}

Grimes, R. W. ^{[1
]}

Schwingenschloegl, U. ^{[1
,3
]}

Bracht, H. ^{[2
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[2] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany

[3] KAUST, PCSE Div, Jeddah 21534, Saudi Arabia

[4] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期

关键词：

band structure; germanium alloys; lattice constants; tin alloys; vacancies (crystal); ATOMIC-SCALE SIMULATIONS; VACANCY COMPLEXES; GERMANIUM; SILICON; SEMICONDUCTORS;

D O I：

10.1063/1.3159468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1-xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard's Law are consistent with experimental results.

引用

页数：3

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