Transition-metal-doped chalcogenide lasers

被引：63

作者：

Carrig, TJ ^{[1
]}

机构：

[1] Coherent Technol Inc, Lafayette, CO 80026 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 07期

关键词：

chalcogenide; transition-metal ion; solid-state laser; diode-pumped solid-state laser; continuous-wave laser; mode-locked laser; Cr : ZnSe; Cr : ZnS; Cr : CdSe; Fe : ZnSe; Cr : CdMnTe;

D O I：

10.1007/s11664-002-0233-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broadly tunable mid-infrared lasers are desirable for a number of scientific, remote-sensing, and military applications. Recently, Cr2+-doped chalcogenide lasers have emerged as an attractive source of tunable laser radiation in the 2-3.4-mum region. This paper provides a brief introduction to this field, summarizes key laser work to date, and provides examples of transmission-metal-doped lasers that operate in this region. In particular, recent results with the Cr2+:ZnSe laser material are highlighted.

引用

页码：759 / 769

页数：11

共 74 条

[1]

Adams JJ, 1999, OSA TRENDS OPT PHOTO, V26, P435

[2] 4.0-4.5-μm lasing of Fe:ZnSe below 180 K, a new mid-infrared laser material [J].

Adams, JJ ;

Bibeau, C ;

Page, RH ;

Krol, DM ;

Furu, LH ;

Payne, SA .

OPTICS LETTERS, 1999, 24 (23) :1720-1722

[3]

ADETUNJI OO, 2001, 2001 US WORKSH PHYS

[4]

ALBRECHT D, 2002, ADV SOL STAT LAS C Q

[5]

BIRNBAUM M, 1997, OSA TRENDS OPTICS PH, V10, P148

[6]

BLUIETT AG, 2001, 2001 US WORKSH PHYS

[7]

BROOKFIELD N, 1993, OPTICAL CRYSTAL HDB

[8] Preparation conditions of chromium doped ZnSe and their infrared luminescence properties [J].

Burger, A ;

Chattopadhyay, K ;

Ndap, JO ;

Ma, X ;

Morgan, SH ;

Rablau, CI ;

Su, CH ;

Feth, S ;

Page, RH ;

Schaffers, KI ;

Payne, SA .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :249-256

[9]

BURGER A, 2000, 12 AM C CRYST GROWTH

[10]

BURGER A, 2001, COMMUNICATION

← 1 2 3 4 5 6 7 8 →