EPR investigations of SiC and SiOC nanometric powders

被引:5
作者
Charpentier, S
Kassiba, A
Fusil, S
Armand, X
Cauchetier, M
Fayet, JC
Emery, J
机构
[1] UNIV MAINE,FAC SCI,LAB PHYS ETAT CONDENSE,URA 807,F-72017 LE MANS,FRANCE
[2] CENS,CEA,DRECAM,SERV PHOTONS ATOM & MOL,F-91191 GIF SUR YVETTE,FRANCE
关键词
D O I
10.1007/BF03162192
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
EPR investigations are performed in SIC and SiOC nanometric powders annealed between 1200 and 1800 degrees C. By using different EPR frequency bands and a suitable spectra analysis, three quite different paramagnetic defects with well defined (g) over tilde(i) (i = 1, 2, 3) and hyperfine (A) over tilde(i) (i = 1, 2) tensors account for the EPR signal in these materials. The defects are characterized by (g) over tilde(1) (g(1)(parallel to) = 2.0046(3), g(1)(perpendicular to)2.0023(3)), (g) over tilde(2) (g(2)(parallel to) = 2.0037(3), g(2)(perpendicular to) = 2.0028(3)) and an isotropic (g) over tilde(3) (2.0030(3)) tensors. In SiC powders, the defects assignment is discussed with respect to the different SiC forms, namely alpha-SiC and beta-SiC polytypes as well as amorphous SiC and carbon present in minor concentration in the network. In SiOC powders, the above defects are evidenced only at high annealing temperature (T-a greater than or equal to 1200 degrees C) when the oxygen contained is highly reduced.
引用
收藏
页码:255 / 267
页数:13
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