Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates

被引：21

作者：

Yang, VK ^{[1
]}

Groenert, ME ^{[1
]}

Taraschi, G ^{[1
]}

Leitz, CW ^{[1
]}

Pitera, AJ ^{[1
]}

Currie, MT ^{[1
]}

Cheng, Z ^{[1
]}

Fitzgerald, EA ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2002年 / 13卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1023/A:1016006824115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Working optical links epitaxially grown by atmospheric MOCVD and fabricated on Si via SiGe virtual substrates are demonstrated for the first time. The SiGe virtual substrates are graded from Si substrates to 100% Ge. Because of the 0.07% lattice mismatch between GaAs and Ge, high-quality GaAs-based thin films with threading dislocation densities <3x10(6) cm(-2) were realized. The optical link consists of a GaAs PIN-LED and a GaAs PIN detector diode. A vertical-coupling scheme was utilized to couple devices with a Al0.15Ga0.85As waveguide. Waveguides of varying length, Y-junctions, and bends were fabricated. The straight waveguides exhibited loss of approximately 144 dB cm(-1). (C) 2002 Kluwer Academic Publishers.

引用

页码：377 / 380

页数：4

共 17 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].