A low-voltage multi-GHz VCO with 58% tuning range in SOICMOS

被引：13

作者：

Fong, N ^{[1
]}

Plouchart, JO ^{[1
]}

Zamdmer, N ^{[1
]}

Liu, D ^{[1
]}

Wagner, L ^{[1
]}

Plett, C ^{[1
]}

Tarr, G ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

来源：

PROCEEDINGS OF THE IEEE 2002 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2002年

关键词：

D O I：

10.1109/CICC.2002.1012862

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A low-voltage 3.0-5.6 GHz VCO was designed and fabricated in an 0.13 mum SOI CMOS process [1]. This VCO features a single-loop horseshoe-shaped inductor and an array of band-switching accumulation MOS (AMOS) varactors. This results in good phase noise and wide tuning range of 58.7% when tuned between 0 to 1.4 V. At a 1 V Supply (V-DD) and 1 MHz offset, the phase noise is -120 dBe/Hz at 3.0 GHz, and -114.5 dBc/Hz at 5.6 GHz. The power dissipation is between 2 and 3 mW across the whole tuning range. The buffered output power is -7 dBm. When V-DD is reduced to 0.83 V, the VCO dissipates less than 1 mW at 5.6 GHz.

引用

页码：423 / 426

页数：4

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