Large electric polarization and exchange bias in multiferroic BiFeO3

被引：344

作者：

Dho, Joonghoe

Qi, Xiaoding

Kim, Hyunho

MacManus-Driscoll, Judith L.

Blamire, Mark G.

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England

[3] Samsung Elect Co, ATD Team, Memory Div, Semicond Business, Yongin, South Korea

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 11期

关键词：

D O I：

10.1002/adma.200502622

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Low-leakage BiFeO3 films have been grown with saturated ferroelectric hysteresis loops (see figure) and a very large remanent polarization. The antiferromagnetic nature of BiFeO3 films is confirmed by the appearance of an exchange bias in BiFeO3-based spin-valve multilayers. The results imply that there is potential for room-temperature applications of BiFeO3 that combine ferroelectric and antiferromagnetic functionality.

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页码：1445 / +

页数：5

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