Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

被引：274

作者：

Han, Sang-Heon ^{[1
,2
]}

Lee, Dong-Yul ^{[2
]}

Lee, Sang-Jun ^{[1
]}

Cho, Chu-Young ^{[1
]}

Kwon, Min-Ki ^{[1
]}

Lee, S. P. ^{[1
]}

Noh, D. Y. ^{[1
]}

Kim, Dong-Joon ^{[2
]}

Kim, Yong Chun ^{[2
]}

Park, Seong-Ju ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Samsung Electromech, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

关键词：

charge injection; current density; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells;

D O I：

10.1063/1.3153508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) is investigated. At low current density, the LEDs with a p-AlGaN EBL show a higher external quantum efficiency (EQE) than LEDs without an EBL. However, the EQE of LEDs without an EBL is higher than LEDs with an EBL as injection current density is increased. The improved EQE of LEDs without an EBL at high current density is attributed to the increased hole injection efficiency.

引用

页数：3

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