Growth control of tungsten oxide nanostructures on planar silicon substrates

被引：27

作者：

Gallea, Floriane ^{[1
]}

Li, Zhengcao ^{[1
]}

Zhang, Zhengjun ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2387883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tungsten oxide nanostructures were deposited on silicon substrates by a thermal oxidation approach. The major factors influencing their phase structure and growth morphology were found to be the substrate temperature and the chamber pressure. By investigating the growth process of these nanostructures, a phase growth diagram was constructed, with which one can realize the phase selection and morphology control of the tungsten oxide nanostructures by this thermal oxidation approach. The present study could be of great significance in fabricating tungsten oxide nanostructures for device applications.

引用

页数：3

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