学术探索
学术期刊
新闻热点
数据分析
智能评审

Easy growth of undoped and doped tungsten oxide nanowires with high purity and orientation

被引：41
作者：
Liu, K
Foord, DT
Scipioni, L
机构：
[1] FEI Co, Circuit Edit & Mask Repair Div, Peabody, MA 01960 USA
[2] FEI Co, Applicat Lab, NL-5600 KA Eindhoven, Netherlands
来源：
NANOTECHNOLOGY | 2005年 / 16卷 / 01期
关键词：
D O I：
10.1088/0957-4484/16/1/003
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An economic method is presented to grow undoped/doped tungsten oxide nanowires with high purity and erect orientation, simply by heating a tungsten filament in a vacuum chamber with some room air leakage. Tungsten oxide nanowires were studied using scanning electron microscopy (SEM), energy dispersion x-ray spectroscopy (EDS) and transmission electron microscopy (TEM). Wires are found standing straight and clean on the filament, similar to30 nm in diameter and up to a few tens of micrometres long. The composition along the wire is uniform for all elements including dopants.
引用
收藏
页码：10 / 14
页数：5
相关论文
共 25 条
[1]   Logic circuits with carbon nanotube transistors [J].
Bachtold, A ;
Hadley, P ;
Nakanishi, T ;
Dekker, C .
SCIENCE, 2001, 294 (5545) :1317-1320
[2]  
Ebbesen T. W., 1997, CARBON NANOTUBES
[3]   High-mobility nanotube transistor memory [J].
Fuhrer, MS ;
Kim, BM ;
Durkop, T ;
Brintlinger, T .
NANO LETTERS, 2002, 2 (07) :755-759
[4]   Tungsten oxide nanowires on tungsten substrates [J].
Gu, G ;
Zheng, B ;
Han, WQ ;
Roth, S ;
Liu, J .
NANO LETTERS, 2002, 2 (08) :849-851
[5]   Synthesis of silicon nitride nanorods using carbon nanotube as a template [J].
Han, WQ ;
Fan, SS ;
Li, QQ ;
Gu, BL ;
Zhang, XB ;
Yu, DP .
APPLIED PHYSICS LETTERS, 1997, 71 (16) :2271-2273
[6]   Synthesis and optical properties of colloidal tungsten oxide nanorods [J].
Lee, K ;
Seo, WS ;
Park, JT .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (12) :3408-3409
[7]  
LEE ST, 2001, Patent No. 6313015
[8]   Large-scale synthesis of tungsten oxide nanowires with high aspect ratio [J].
Li, XL ;
Liu, JF ;
Li, YD .
INORGANIC CHEMISTRY, 2003, 42 (03) :921-924
[9]  
LIU D, 2001, HYS REV B, V63
[10]   Conductance spikes in single-walled carbon nanotube field-effect transistor [J].
Liu, K ;
Burghard, M ;
Roth, S ;
Bernier, P .
APPLIED PHYSICS LETTERS, 1999, 75 (16) :2494-2496
123