Easy growth of undoped and doped tungsten oxide nanowires with high purity and orientation

被引：41

作者：

Liu, K

Foord, DT

Scipioni, L

机构：

[1] FEI Co, Circuit Edit & Mask Repair Div, Peabody, MA 01960 USA

[2] FEI Co, Applicat Lab, NL-5600 KA Eindhoven, Netherlands

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 01期

关键词：

D O I：

10.1088/0957-4484/16/1/003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An economic method is presented to grow undoped/doped tungsten oxide nanowires with high purity and erect orientation, simply by heating a tungsten filament in a vacuum chamber with some room air leakage. Tungsten oxide nanowires were studied using scanning electron microscopy (SEM), energy dispersion x-ray spectroscopy (EDS) and transmission electron microscopy (TEM). Wires are found standing straight and clean on the filament, similar to30 nm in diameter and up to a few tens of micrometres long. The composition along the wire is uniform for all elements including dopants.

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收藏

页码：10 / 14

页数：5

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