Comparison of InGaAs pin photodiodes with Ti/Pt/Au and Au reflectors

被引：6

作者：

Ho, CL ^{[1
]}

Ho, WJ

Wu, MC

Liaw, JW

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Elect Engn Res Inst, Hsinchu 30043, Taiwan

[2] Chungwa Telecom Co Ltd, Telecommun Labs, Tao Yuan 326, Taiwan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 20期

关键词：

D O I：

10.1049/el:19991191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have fabricated planar InGaAs pin photodiodes designed for high-speed operation with rear metallic reflectors. The effectiveness of both Ti/Pt/Au and Au reflectors for enhancing the photoresponse of InCaAs pin photodiodes is evaluated. The experimental results show that an InGaAs pin photodiode with a 1 mu m absorption layer can achieve a responsivity > 0.9A/W (similar to 86% quantum efficiency) at 1.3 mu m wavelength with an Au reflector but can achieve only similar to 0.8A/W (similar to 76% quantum efficiency) with a Ti/Pt/Au reflector. Furthermore, the reflectivity of both metallic mirrors (similar to 0.9 for Au and similar to 0.4 for Ti/Pt/Au) is extracted using a simple theoretical model.

引用

页码：1767 / 1768

页数：2

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