108-GHZ GAINAS/INP P-I-N PHOTODIODES WITH INTEGRATED BIAS TEES AND MATCHED RESISTORS

被引：25

作者：

WEY, YG

GIBONEY, KS

BOWERS, JE

RODWELL, MJW

SILVESTRE, P

THIAGARAJAN, P

ROBINSON, GY

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 11期

关键词：

D O I：

10.1109/68.250053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Connections to bulk bias tees and various mis-matched loads degrade the usable frequency response of high-speed photodetectors. Monolithic integration of passive components to enhance the realizable performance of high-bandwidth, long-wavelength photodiodes is demonstrated. Circuits having bias tees and matched resistors integrated with 7-mu m x 7-mu m photodiodes show unsable electrical bandwidths exceeding 100 GHz.

引用

页码：1310 / 1312

页数：3

共 7 条

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