ULTRAFAST GRADED DOUBLE-HETEROSTRUCTURE GAINAS/INP PHOTODIODE

被引：30

作者：

WEY, YG

CRAWFORD, DL

GIBONEY, K

BOWERS, JE

RODWELL, MJ

SILVESTRE, P

HAFICH, MJ

ROBINSON, GY

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

[2] COLORADO STATE UNIV,CTR OPTOELECTR COMPUTING SYST,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期

关键词：

D O I：

10.1063/1.104991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafast graded double-heterostructure GaInAs/InP p-i-n photodiodes grown by gas source molecular beam epitaxy have been fabricated on an InP semi-insulating substrate. The graded band-gap layers and the double heterostructure reduce carrier trapping effects and diffusion current and the resulting response of a 5-mu-m X 5-mu-m device was measured by electro-optic sampling to be 5 ps full width at half maximum (FWHM). The deconvolved impulse response is 3.8 ps FWHM.

引用

页码：2156 / 2158

页数：3

共 5 条

[1] MILLIMETER-WAVE-GUIDE-MOUNTED INGAAS PHOTODETECTORS
BOWERS, JE
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[2] HIGH-SPEED INGAAS-INP P-I-N PHOTODIODES FABRICATED ON A SEMI-INSULATING SUBSTRATE
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SIBBETT, W
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[4] COAXIALLY MOUNTED 67 GHZ BANDWIDTH INGAAS PIN PHOTODIODE
TUCKER, RS
TAYLOR, AJ
BURRUS, CA
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[J]. ELECTRONICS LETTERS, 1986, 22 (17) : 917 - 918
[5] 100 GHZ BANDWIDTH PLANAR GAAS SCHOTTKY PHOTO-DIODE
WANG, SY
BLOOM, DM
[J]. ELECTRONICS LETTERS, 1983, 19 (14) : 554 - 555

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