Effect of surface acoustic waves on low-temperature photoluminescence of GaAs

被引：38

作者：

Zhuravlev, KS

Petrov, DV

Bolkhovityanov, YB

Rudaja, NS

机构：

[1] Institute of Semiconductor Physics

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期

关键词：

D O I：

10.1063/1.119180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The near-band-gap low-temperature photoluminescence (PL) in a pure film of GaAs in the presence of surface acoustic waves (SAW) has been studied experimentally. The complex behavior of the PL peak intensities with SAW power in the excitonic and acceptor spectral regions results from a charge bunching due to the piezoelectric field of SAW. (C) 1997 American Institute of Physics.

引用

页码：3389 / 3391

页数：3

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