Quantitative mapping of switching behavior in piezoresponse force microscopy

被引：194

作者：

Jesse, Stephen ^{[1
]}

Lee, Ho Nyung ^{[1
]}

Kalinin, Sergei V. ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2006年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.2214699

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The application of ferroelectric materials for nonvolatile memory and ferroelectric data storage necessitates quantitative studies of local switching characteristics and their relationship to material microstructure and defects. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is developed as a quantitative tool for real-space imaging of imprint, coercive bias, remanent and saturation responses, and domain nucleation voltage on the nanoscale. Examples of SS-PFM implementation, data analysis, and data visualization are presented for epitaxial lead zirconate titanate (PZT) thin films and polycrystalline PZT ceramics. Several common artifacts related to the measurement method, environmental factors, and instrument settings are analyzed. (c) 2006 American Institute of Physics.

引用

页数：10

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