Adsorption and thermal decomposition of formic acid on the Si(100)(2x1)-K surface

被引：13

作者：

Kubo, T ^{[1
]}

Minami, N ^{[1
]}

Aruga, T ^{[1
]}

Takagi, N ^{[1
]}

Nishijima, M ^{[1
]}

机构：

[1] KYOTO UNIV,GRAD SCH SCI,DEPT CHEM,KYOTO 60601,JAPAN

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 1997年 / 101卷 / 35期

关键词：

D O I：

10.1021/jp9707089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorbed slate and thermal decomposition of formic acid (HCOOH) on the Si(100)(2 x 1) surface covered with a monolayer of K have been studied by using electron energy loss spectroscopy and thermal desorption spectroscopy. Three types of formate species are observed: (1) three-dimensional HCOOK islands, (2) HCOOK of the first layer, and (3) HCOOSi adsorbed in the K-free patches. HCOOK of the first layer is thermally stabilized, while thermal decomposition of HCOOSi is promoted by the presence of K. Mechanisms of the formation of HCOOK islands and HCOOSi species are discussed. Comparisons of HCOO on Si(100)(2 x 1)-K and clean Si(100)(2 x 1) surfaces are made.

引用

页码：7007 / 7011

页数：5

共 36 条

[1] PHOTOELECTRON DIFFRACTION STUDY OF SI(001)2X1-K SURFACE - EXISTENCE OF A POTASSIUM DOUBLE-LAYER [J].