Characterization of MgxZn1-xO thin films prepared by sol-gel dip coating

被引：29

作者：

Ji, ZG ^{[1
]}

Song, YL ^{[1
]}

Xiang, Y ^{[1
]}

Liu, K ^{[1
]}

Wang, C ^{[1
]}

Ye, ZZ ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 265卷 / 3-4期

关键词：

MgxZn1-xO thin film; photoluminescence; sol-gel; dip coating;

D O I：

10.1016/j.jcrysgro.2004.02.083

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MgxZn1-xO thin films were prepared on quartz substrates by a sol-gel dip-coating process. Structural and optical properties were investigated using X-ray diffraction, optical absorbance, and photoluminescence (PL). Results showed that the MgxZn1-xO thin films retained the ZnO hexagonal crystal structure with very little lattice deformation compared to the pure ZnO films. The optical band-gap of the MgxZn1-xO thin films varied from 3.28 to 3.73 eV as the Mg content x was increased from 0.0 to 0.3, and it can be formulated using the equation E-g = 3.28 + 1.53x. Results also showed good PL characteristics of these films with strong band-edge UV emission. Like the absorption, the emission energy also shifted towards higher photon energy as the Mg content x in the film was increased. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：537 / 540

页数：4

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