Characterization of photolithographically defined NIS tunnel junctions as X-ray sensors

被引：6

作者：

Chow, D

Neuhauser, B

Frank, M

Mears, CA

Abusaidi, R

Cunningham, M

Golzarian, RM

Hake, DD

Labov, SE

Lindeman, MA

Owens, WE

Sadoulet, B

Slepoy, A

机构：

[1] SAN FRANCISCO STATE UNIV,DEPT PHYS & ASTRON,THIN FILM LAB,SAN FRANCISCO,CA 94132

[2] UNIV CALIF BERKELEY,NSF CTR PARTICLE ASTROPHYS,BERKELEY,CA 94720

[3] LAWRENCE LIVERMORE NATL LAB,EXPTL ASTROPHYS LAB,LIVERMORE,CA 94550

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 370卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0168-9002(95)01048-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We are developing normal-insulator-superconductor (NIS) tunnel junctions for use as X-ray detectors for astronomical purposes and as phonon sensors for dark matter detectors. We are using photolithographic techniques to produce structures in which aluminum is the superconductor, Al2O3 is the tunnel barrier, and copper is the normal metal. We describe microfabrication details and present X-ray pulse data.

引用

页码：57 / 60

页数：4

共 5 条

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FISHER PA, 1995, IN PRESS J LOW TEMP

[2] High-resolution X-ray detectors with high-speed SQUID readout of superconducting tunnel junctions [J].