Conduction-band mixing in T- and V-shaped quantum wires

被引:35
作者
Pescetelli, S
DiCarlo, A
Lugli, P
机构
[1] INFM-Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”
关键词
D O I
10.1103/PhysRevB.56.R1668
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By means of a tight-binding approach, we have studied the influence of barrier states on the conduction band of the T-and V-shaped quantum wires. For AlAs/GaAs superlattices or pure AlAs barriers, X-related states induce strong modifications in the wire conduction band that cannot be accounted For by a simple effective-mass approximation. With respect to quantum wells, we show that the quasi-one-dimensional confinement of quantum wires enhances valley mixing and leads to a reduction in the energy of lower lying states.
引用
收藏
页码:R1668 / R1671
页数:4
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