GAMMA-CHI INTERVALLEY TRANSFER IN SINGLE ALAS BARRIERS UNDER HYDROSTATIC-PRESSURE

被引：21

作者：

CARBONNEAU, Y ^{[1
]}

BEERENS, J ^{[1
]}

CURY, LA ^{[1
]}

LIU, HC ^{[1
]}

BUCHANAN, M ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期

关键词：

D O I：

10.1063/1.109502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the contribution of GAMMA-X intervalley transfer to the tunneling current in single AlAs barrier heterostructures grown on a GaAs substrate by measuring I-V characteristics at low temperature and under hydrostatic pressure up to 9 kbar. The application of hydrostatic pressure affects the contribution of the GAMMA-X transfer process to the total tunneling current at a given bias voltage. Experimental results are compared with current-voltage characteristics calculated with a model taking into account the GAMMA-X transfer at heterointerfaces. Only transfer processes involving the longitudinal X valley in AlAs are considered in the calculations. Very good agreement is found for low bias conditions at all pressures.

引用

页码：1955 / 1957

页数：3

共 15 条

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