RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL ENERGY-LEVELS CONFINED BY ALX GA1-XAS-GAMMA- AND X-POINT BARRIERS

被引：36

作者：

BONNEFOI, AR ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.37.8754

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8754 / 8762

页数：9

共 19 条

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[3] ENERGY-BAND DIAGRAMS AND CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE-BARRIER TUNNEL STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3836 - 3844
[4] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 285 - 287
[5] CURRENT TRANSPORT MECHANISMS IN GAAS/ALAS TUNNEL STRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 988 - 995
[6] CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[7] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
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ESAKI, L
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[8] CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3792 - 3797
[9] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 490 - 492
[10] ELECTRON-TUNNELING IN GAAS/ALGAAS HETEROSTRUCTURES
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (04) : 371 - 376

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