Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films

被引：151

作者：

Ishizuka, Shogo ^{[1
]}

Yamada, Akimasa ^{[1
]}

Islam, Muhammad Monirul ^{[2
]}

Shibata, Hajime ^{[1
]}

Fons, Paul ^{[1
]}

Sakurai, Takeaki ^{[2
]}

Akimoto, Katsuhiro ^{[2
]}

Niki, Shigeru ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 03期

关键词：

copper compounds; electrical conductivity; energy gap; gallium compounds; grain size; impurity states; indium compounds; photoluminescence; point defects; semiconductor doping; semiconductor growth; semiconductor thin films; sodium; surface morphology; ternary semiconductors; SOLAR-CELLS; CUINSE2; PHOTOLUMINESCENCE; SODIUM; SURFACES;

D O I：

10.1063/1.3190528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The systematic variations in the structural, optical, and electrical properties of polycrystalline Cu(In,Ga)Se-2 (CIGS) thin films with Na doping level were investigated. Precise control of the Na concentration in CIGS films was demonstrated using alkali-silicate glass thin layers of various thicknesses deposited on substrates prior to CIGS growth. The CIGS grain size was observed to decrease with increasing Na concentration, although the surface morphology became smoother and exhibited a stronger (112) texture, which has been demonstrated consequence of larger grain size. The Ga composition gradient in the CIGS films was found to become large due to the presence of Na during growth, which in turn led to a decrease in the nominal band gap energy. Variations in the photoluminescence spectra and electrical properties suggested that the formation of an acceptor energy state, which may originate from O-Se point defects, was enhanced in the presence of Na. This result suggests that not only Na, but also the presence of O in combination with Na contributes to the compensation of point defects and enhances p-type conductivity in CIGS films.

引用

页数：6

共 35 条

[1]

[Anonymous], 23 IEEE PHOT SPEC C

[2]

[Anonymous], 26 IEEE PHOT SPEC C

[3] Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursors [J].

Ård, MB ;

Granath, K ;

Stolt, L .

THIN SOLID FILMS, 2000, 361 :9-16

[4] Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector [J].

Chichibu, SF ;

Ohmori, T ;

Shibata, N ;

Koyama, T ;

Onuma, T .

APPLIED PHYSICS LETTERS, 2004, 85 (19) :4403-4405

[5] DEFECT LEVEL IDENTIFICATION IN CUINSE2 FROM PHOTOLUMINESCENCE STUDIES [J].

DAGAN, G ;

ABOUELFOTOUH, F ;

DUNLAVY, DJ ;

MATSON, RJ ;

CAHEN, D .

CHEMISTRY OF MATERIALS, 1990, 2 (03) :286-293

[6]

DAWSONELLI DF, 1994, IEEE PHOT SPEC CONF, P152, DOI 10.1109/WCPEC.1994.519830

[7] HIGH-EFFICIENCY CUINXGA1-XSE2 SOLAR-CELLS MADE FROM (INX,GA1-X)2SE3 PRECURSOR FILMS [J].

GABOR, AM ;

TUTTLE, JR ;

ALBIN, DS ;

CONTRERAS, MA ;

NOUFI, R ;

HERMANN, AM .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :198-200

[8] LOCAL-STRUCTURE OF SILICATE-GLASSES [J].

GREAVES, GN ;

FONTAINE, A ;

LAGARDE, P ;

RAOUX, D ;

GURMAN, SJ .

NATURE, 1981, 293 (5834) :611-616

[9] Efficiency enhancement of Cu(In,Ga)Se2 solar cells fabricated on flexible polyimide substrates using alkali-silicate glass thin layers [J].

Ishizuka, Shogo ;

Hommoto, Hiroyuki ;

Kido, Nobuaki ;

Hashimoto, Kimikazu ;

Yamada, Akimara ;

Niki, Shigeru .

APPLIED PHYSICS EXPRESS, 2008, 1 (09) :0923031-0923033

[10] Alkali incorporation control in Cu(In, Ga)Se2 thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency [J].

Ishizuka, Shogo ;

Yamada, Akimasa ;

Matsubara, Koji ;

Fons, Paul ;

Sakurai, Keiichiro ;

Niki, Shigeru .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

← 1 2 3 4 →