Catalytic decomposition of n-heptane for the growth of high quality single wall carbon nanotubes

被引：12

作者：

Grimm, D.

Grueneis, A.

Kramberger, C.

Ruemmeli, M.

Gemming, T.

Buechner, B.

Barreiro, A.

Kuzmany, H.

Pfeiffer, R.

Pichler, T.

机构：

[1] IFW Dresden, D-01171 Dresden, Germany

[2] Univ Fed Fluminense, Inst Fis, BR-24210346 Niteroi, RJ, Brazil

[3] Inst Catala Nanotecnol, E-08193 Bellaterra, Spain

[4] Ctr Nacl Microelectron, E-08193 Bellaterra, Spain

[5] Inst Mat Phys, A-1090 Vienna, Austria

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 428卷 / 4-6期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1016/j.cplett.2006.07.084

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High quality single wall carbon nanotubes (SWCNT) were grown using n-heptane as the carbon feedstock and Ni/Co acetylacetonate catalyst precursors. They were characterized with regards to morphology, diameter distributions and yield using microscopic and spectroscopic techniques. n-Heptane provides a cheap and effective carbon source for the selective synthesis of clean SWCNTs at 680 degrees C with improved yield in comparison to other carbon sources. In addition we show the applicability of selective growth of individual SWCNTs rooting from lithographically patterned catalyst islands at this low temperature. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：416 / 420

页数：5

共 23 条

[21] Room-temperature transistor based on a single carbon nanotube [J].