Electro-deposition of Fe-Tb-O films with ac currents for use in high frequency micromagnetic devices

被引：2

作者：

Lim, PB

Shin, KH

Inoue, M

Arai, KI

Izaki, M

Yamada, K

Fujii, T

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Saitama Univ, Dept Funct Mat Sci, Urawa, Saitama 3380825, Japan

[3] Osaka Municipal Tech Res Inst, Dept Inorgan Chem, Osaka 536855, Japan

[4] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 81卷 / 1-3期

关键词：

electro-deposition; Fe-Tb-O film; hetero-granular film; micromagnetic devices;

D O I：

10.1016/S0924-4247(99)00131-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electro-deposition of Fe-Tb-O films was attempted using ac currents with low frequency. The film composition, especially Tb content of films, was found to be sensitive to the concentration of complex agent, KNaC4H4O6: when KNaC4H4O6 = 283.47 mM, plated films with very high Tb content reaching 29 at.% were Obtained, in spite of the difficulty in electro-deposition of Tb owing to its very low catalytic activity. Coercivity H-c and squareness ratio M-r/M-s of films varied considerably depending strongly on the intensity of ac current i: when i = 0.67 A/dm(2), films with relatively soft magnetic properties of H-c = 290 e and M-r/M-s = 0.93 were realized. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：236 / 239

页数：4

共 9 条

[1] Soft magnetic properties of Fe-M-O (M=Hf, Zr, Y, Ce) films with high electrical resistivity [J].