SiO2/AlGaN/InGaN/GaN MOSDHFETs

The characteristics of a novel nitride based field-effect transistor combining SiO2 gate isolation and an AlGaN/InGaN/GaN double heterostructure design (MOSDHFET) are reported. The double heterostructure design with InGaN channel layer significantly improves confinement of the two-dimensional (2-D) electron gas and compensates strain modulation in AlGaN barrier resulting from the gate voltage modulations. These decrease the total trapped charge and hence the current collapse. The combination of the SiO2 gate isolation and improved carrier confinement/strain management results in current collapse free MOSDHFET devices with gate leakage currents about four orders of magnitude lower than those of conventional Schottky gate HFETs.