Controlled single electron transfer between Si:P dots

被引：24

作者：

Buehler, T. M. ^{[1
]}

Chan, V.

Ferguson, A. J.

Dzurak, A. S.

Hudson, F. E.

Reilly, D. J.

Hamilton, A. R.

Clark, R. G.

Jamieson, D. N.

Yang, C.

Pakes, C. I.

Prawer, S.

机构：

[1] Univ New S Wales, Sch Phys & Elect Engn, Ctr Comp Quantum Technol, Sydney, NSW 2052, Australia

[2] Univ Melbourne, Sch Phys, Ctr Quantum Comp Technol, Melbourne, Vic 3010, Australia

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2203740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus-doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc and rf modes as charge detectors. With the possibility to scale the dots down to a few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

[1] Correlated charge detection for readout of a solid-state quantum computer [J].

Buehler, TM ;

Reilly, DJ ;

Brenner, R ;

Hamilton, AR ;

Dzurak, AS ;

Clark, RG .

APPLIED PHYSICS LETTERS, 2003, 82 (04) :577-579

[2] Silicon quantum computation based on magnetic dipolar coupling [J].

de Sousa, R ;

Delgado, JD ;

Das Sarma, S .

PHYSICAL REVIEW A, 2004, 70 (05) :052304-1

[3]

Elzerman JM, 2004, NATURE, V430, P431, DOI 10.1039/nature02693

[4] POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].

FAHEY, PM ;

GRIFFIN, PB ;

PLUMMER, JD .

REVIEWS OF MODERN PHYSICS, 1989, 61 (02) :289-384

[5] Practical design and simulation of silicon-based quantum-dot qubits [J].

Friesen, M ;

Rugheimer, P ;

Savage, DE ;

Lagally, MG ;

van der Weide, DW ;

Joynt, R ;

Eriksson, MA .

PHYSICAL REVIEW B, 2003, 67 (12) :4

[6] Electrometry on charge traps with a single-electron transistor [J].

Furlan, M ;

Lotkhov, SV .

PHYSICAL REVIEW B, 2003, 67 (20)

[7] Global control and fast solid-state donor electron spin quantum computing [J].

Hill, CD ;

Hollenberg, LCL ;

Fowler, AG ;

Wellard, CJ ;

Greentree, AD ;

Goan, HS .

PHYSICAL REVIEW B, 2005, 72 (04)

[8] Charge-based quantum computing using single donors in semiconductors [J].

Hollenberg, LCL ;

Dzurak, AS ;

Wellard, C ;

Hamilton, AR ;

Reilly, DJ ;

Milburn, GJ ;

Clark, RG .

PHYSICAL REVIEW B, 2004, 69 (11)

[9] Coulomb blockade in a nanoscale phosphorus-in-silicon island [J].

Hudson, F. E. ;

Ferguson, A. J. ;

Yang, C. ;

Jamieson, D. N. ;

Dzurak, A. S. ;

Clark, R. G. .

MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) :1809-1813

[10] Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions [J].

Jamieson, DN ;

Yang, C ;

Hopf, T ;

Hearne, SM ;

Pakes, CI ;

Prawer, S ;

Mitic, M ;

Gauja, E ;

Andresen, SE ;

Hudson, FE ;

Dzurak, AS ;

Clark, RG .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

← 1 2 →