Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

被引：157

作者：

Jamieson, DN

Yang, C

Hopf, T

Hearne, SM

Pakes, CI

Prawer, S

Mitic, M

Gauja, E

Andresen, SE

Hudson, FE

Dzurak, AS

Clark, RG

机构：

[1] Univ New S Wales, Sch Phys, Ctr Quantum Comp Technol, Sydney, NSW 2052, Australia

[2] Univ New S Wales, Sch Elect Engn, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.1925320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub-20-keV. The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14-keV 31P ions through nanoscale masks into silicon as a route to the fabrication of devices based on single donors in silicon. 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 22 条

[1]

Bertolini G., 1968, SEMICONDUCTOR DETECT

[2]

BREESE MBH, 1996, MAT ANAL NUCL MICROP

[3] FIELD-IONIZATION DEVICE USED FOR MEASURING PULSE-HEIGHT DEFECT OF HE+ IN SILICON [J].