Direct gap in ordered silicon carbon alloys

被引：8

作者：

Krishnamurthy, S

Berding, MA

Sher, A

van Schilfgaarde, M

Chen, AB

机构：

[1] SRI Int, Menlo Pk, CA 94025 USA

[2] Sandia Natl Labs, Livermore, CA 94550 USA

[3] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 20期

关键词：

D O I：

10.1063/1.125261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that alloying silicon with a few percent of carbon can render the band gap direct with strong optical absorption, provided the carbon atoms are ordered. The addition of carbon introduces a significant s character into the conduction band minimum, resulting in a large dipole matrix element. First-principles calculations of the optical absorption in ordered in CxSi1-x alloys for x = 1/54 and 1/32 show a near band edge absorption coefficient about half that of GaAs. (C) 1999 American Institute of Physics. [S0003-6951(99)03845-0].

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页码：3153 / 3155

页数：3

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