Fabrication of silicon nanopillars using self-organized gold-chromium mask

被引：27

作者：

Ovchinnikov, V ^{[1
]}

Malinin, A ^{[1
]}

Novikov, S ^{[1
]}

Tuovinen, C ^{[1
]}

机构：

[1] Aalto Univ, Dept Elect & Commun Engn, Elect Phys Lab, FIN-02015 Helsinki, Finland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

nanostructures; self-organized mask; nanopillars; plasma etch; silicon;

D O I：

10.1016/S0921-5107(99)00244-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present a fabrication process for nanometer scale silicon pillars. High aspect ratio and smooth sidewalls of the pillars are obtained by reactive ion etching of self-organized gold-chromium masked silicon. After annealing, a thin Au/Cr film is converted to the disordered array of metal particles. The particle diameter and density could be controlled by varying the thickness of the films. A set of experiments in fluorine based plasmas has been carried out in order to investigate the processing of silicon quantum pillars. The results show that the mask has a low speed of erosion. Sidewall evolution during low rf power etching has been analyzed. The process parameters for realizing high-anisotropy pillars of different shapes have been found. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：459 / 463

页数：5

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