Fabrication of silicon cones and pillars using rough metal films as plasma etching masks

被引：89

作者：

Seeger, K ^{[1
]}

Palmer, RE ^{[1
]}

机构：

[1] Univ Birmingham, Sch Phys & Astron, Nanoscale Phys Res Lab, Birmingham B15 2TT, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.123638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a simple fabrication process which allows the production of nanoscale silicon structures. Rough silver films are used as an etching mask for reactive ion etching at 10 degrees C. Variation of the etching parameters, such as the rf power, allows control over the shape of the features; the production of both pillars and cones is possible. The density and diameter of these features are controlled by the etching time. Pillars with diameters as small as 5 nm are reported. (C) 1999 American Institute of Physics. [S0003-6951(99)02911-3].

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页码：1627 / 1629

页数：3

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