SUB-50 NM HIGH ASPECT-RATIO SILICON PILLARS, RIDGES, AND TRENCHES FABRICATED USING ULTRAHIGH RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND REACTIVE ION ETCHING

被引：44

作者：

FISCHER, PB

CHOU, SY

机构：

[1] University of Minnesota, Department of Electrical Engineering, Minneapolis

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.108696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultrahigh resolution electron beam lithography and chlorine based reactive ion etching. These nanoscale Si features can be further reduced to 10 nm using an additional HF wet etch. No photoluminescence was observed from arrays of 10 nm Si structures passivated with HF.

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页码：1414 / 1416

页数：3

相关论文

共 14 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] DOUBLE 15-NM-WIDE METAL GATES 10 NM APART AND 70 NM THICK ON GAAS [J].

CHOU, SY ;

FISCHER, PB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1919-1922

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[4] PHOTOLITHOGRAPHIC FABRICATION OF MICRON-DIMENSION POROUS SI STRUCTURES EXHIBITING VISIBLE LUMINESCENCE [J].

DOAN, VV ;

SAILOR, MJ .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :619-620

[5]

ENGELHARD M, 1990, P SOC PHOTO-OPT INS, V1392, P210

[6] 3-DIMENSIONAL QUANTUM WELL EFFECTS IN ULTRAFINE SILICON PARTICLES [J].

FURUKAWA, S ;

MIYASATO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2207-L2209

[7] CHARACTERIZATION OF BCL3-CL2 SILICON TRENCH ETCHING [J].

KASSAM, A ;

MEADOWCROFT, C ;

SALAMA, CAT ;

RATNAM, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) :1613-1617

[8] EFFECTS OF CHROMIUM ON THE REACTIVE ION ETCHING OF STEEP-WALLED TRENCHES IN SILICON [J].

MALUF, NI ;

CHOU, SY ;

MCVITTIE, JP ;

KUAN, SWJ ;

ALLEE, DR ;

PEASE, RFW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1497-1501

[9] FABRICATION OF 15 mu m THICK Si-HOLE MASKS FOR DEMAGNIFYING PROJECTION SYSTEMS FOR ION- OR ELECTRON-BEAMS. [J].

Olschimke, J. ;

Rangelow, I.W. ;

Tschudi, T. ;

Kassing, R. .

Microelectronic Engineering, 1987, 6 (1-4) :547-552

[10]

RANGELOW IW, 1990, P SOC PHOTO-OPT INS, V1392, P240