EFFECTS OF CHROMIUM ON THE REACTIVE ION ETCHING OF STEEP-WALLED TRENCHES IN SILICON

被引：10

作者：

MALUF, NI

CHOU, SY

MCVITTIE, JP

KUAN, SWJ

ALLEE, DR

PEASE, RFW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1497 / 1501

页数：5

共 19 条

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