PHOTOLITHOGRAPHIC FABRICATION OF MICRON-DIMENSION POROUS SI STRUCTURES EXHIBITING VISIBLE LUMINESCENCE

被引：47

作者：

DOAN, VV ^{[1
]}

SAILOR, MJ ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT CHEM,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A procedure for the patterned synthesis of porous Si exhibiting visible luminescence is described. Anodic electrochemical etch of n- or p-type Si in ethanol/HF solution leads directly to porous Si that luminesces with lambda(max) between 750 and 650 nm. Positive and negative patterns of luminescent porous Si are etched into n- and p-type Si samples, respectively, by projecting a high-contrast image on the electrode surface during the etching process. Lithographic resolution obtained is on the order of 20-mu-m.

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页码：619 / 620

页数：2

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